Semiconductor image sensor device having back side illuminated image sensors with embedded color filters
US9281338B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2014 |
| Grant date | Mar 8, 2016 |
| Priority date | — |
| Expiry date | Apr 25, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/48463
Abstract
A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. The radiation-sensing regions are separated by a plurality of gaps. A plurality of radiation-blocking structures is disposed over the second side of the substrate. Each of the radiation-blocking structures is aligned with a respective one of the gaps. A plurality of color filters are disposed in between the radiation-blocking structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.