Method for forming oxide film by plasma-assisted processing
US9284642B2 · kind B2 · utility
451Cited by
1References
7Claims
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Key dates
| Filing date | Sep 19, 2013 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | Jan 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an oxide film by plasma-assisted processing includes: (i) supplying a precursor reactive to none of oxygen, CxOy, and NxOy (x and y are integers) without a plasma to a reaction space wherein a substrate is placed; (ii) exposing the precursor to a plasma of CxOy and/or NxOy in the reaction space; and (iii) forming an oxide film on the substrate using the precursor and the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.