Word line auto-booting in a spin-torque magnetic memory having local source lines
US9286218B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2014 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | Sep 24, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02D10/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a spin-torque magnetic random access memory (MRAM) that includes local source lines, auto-booting of the word line is used to conserve power consumption by reusing charge already present from driving a plurality of bit lines during writing operations. Auto-booting is accomplished by first driving the word line to a first word line voltage. After such driving, the word line isolated. Subsequent driving of the plurality of bit lines that are capacitively coupled to the word line causes the word line voltage to be increased to a level desired to allow sufficient current to flow through a selected memory cell to write information into the selected memory cell. Additional embodiments include the use of a supplemental voltage provider that is able to further boost or hold the isolated word line at the needed voltage level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.