Methods for fabricating integrated circuits including generating photomasks for directed self-assembly (DSA) using DSA target patterns
US9286434B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2014 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | Jun 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0271
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes generating a photomask for forming a DSA directing pattern overlying a semiconductor substrate. The DSA directing pattern is configured to guide a self-assembly material deposited thereon that undergoes directed self-assembly (DSA) to form a DSA pattern. Generating the photomask includes identifying placement of DSA target patterns in a design layout. The DSA target patterns are grouped into groups including a first group and a first group boundary is defined around the first group. The method further includes determining if a neighboring DSA target pattern to the first group boundary is at least a predetermined minimal keep-away distance from an adjacent DSA target pattern that is within the first group boundary. The method also includes determining if the DSA target patterns in the first group are DSA compatible. An output mask pattern is generated using the first group boundary.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.