Techniques for forming angled structures for reduced defects in heteroepitaxy of semiconductor films
US9287123B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2014 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | Aug 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/82
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a method for etching a substrate includes providing a reactive ambient around the substrate when a non-crystalline layer is disposed over a first crystalline material in the substrate; generating a plasma in a plasma chamber; modifying a shape of a plasma sheath boundary of the plasma; extracting ions from the plasma; and directing the ions to the substrate at a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate, wherein the ions and reactive ambient are effective to form an angled cavity through the non-crystalline layer to expose a portion of the first crystalline material at a bottom of the angled cavity, and the angled cavity forms a non-zero angle of inclination with respect to the perpendicular.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.