Methods for depositing a silicon containing layer with argon gas dilution

US9287137B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Qunhua Wang · San Jose, US
• Weijie Wang · Nanhu, CN
• Young Jin Choi · Seoul, KR
• Seon-Mee Cho · San Jose, US
• Yi Cui · Stanford, US
• Beom Soo Park · San Jose, US
• Soo Young Choi · Fremont, US

Key dates

• Filing date: Sep 28, 2012
• Grant date: Mar 15, 2016
• Expiry date: Nov 24, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/021
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of the disclosure generally provide methods of forming a silicon containing layers in TFT devices. The silicon can be used to form the active channel in a LTPS TFT or be utilized as an element in a gate dielectric layer, a passivation layer or even an etch stop layer. The silicon containing layer is deposited by a vapor deposition process whereby an inert gas, such as argon, is introduced along with the silicon precursor. The inert gas functions to drive out weak, dangling silicon-hydrogen bonds or silicon-silicon bonds so that strong silicon-silicon or silicon-oxygen bonds remain to form a substantially hydrogen free silicon containing layer.