Semiconductor device and method for fabricating the same
US9287181B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2015 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | Jan 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method for fabricating a semiconductor device. The method includes forming an interlayer insulating layer on a substrate, the interlayer insulating layer including a first trench; forming a high-k dielectric layer in the first trench; successively forming a diffusion layer and a blocking layer on the high-k dielectric layer; subsequently performing annealing; after the annealing, successively removing the blocking layer and the diffusion layer; forming a first barrier layer on the high-k dielectric layer; successively forming a work function adjustment layer and a gate conductor on the first barrier layer; and forming a capping layer on the gate conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.