Isolation structure having a second impurity region with greater impurity doping concentration surrounds a first impurity region and method for forming the same, and image sensor including the isolation structure and method for fabricating the image sensor
US9287309B2 · kind B2 · utility
3Cited by
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20Claims
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Key dates
| Filing date | Aug 27, 2013 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | Jun 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
Abstract
An isolation structure and method of forming the same. The isolation structure includes a first isolation structure having including an insulation layer formed in a trench in a substrate and a second isolation structure, formed on the first isolation structure. The second isolation structure includes a first impurity region formed in the substrate, the first impurity region having a first impurity doping concentration, and a second impurity region that is formed around the first impurity region, the second impurity region having a second impurity doping concentration that is greater than the first doping concentration.
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