Semiconductor device having localized charge balance structure and method
US9287371B2 · kind B2 · utility
3Cited by
19References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 20, 2013 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | Sep 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a semiconductor substrate is provided having a localized superjunction structure extending from a major surface. A doped region is then formed adjacent the localized superjunction structure to create a charge imbalance therein. In one embodiment, the doped region can be an ion implanted region formed within the localized superjunction structure. In another embodiment, the doped region can be an epitaxial layer having a graded dopant profile adjoining the localized superjunction structure. The charge imbalance can improve, among other things, unclamped inductive switching (UIS) performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.