Patent · US Active

Semiconductor device and manufacturing method

US9287377B2 · kind B2 · utility

3Cited by

1References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Ulrich Glaser · Putzbrunn, DE
Peter Irsigler · Ried im Innkreis, AT
Hans-Joachim Schulze · Taufkirchen, DE

Key dates

Filing date	Aug 4, 2014
Grant date	Mar 15, 2016
Priority date	—
Expiry date	Aug 4, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/668
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a trench extending into a semiconductor body from a first surface. At least one of a ternary carbide and a ternary nitride is in the trench.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.