Semiconductor device and method for fabricating the same
US9293337B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2014 |
| Grant date | Mar 22, 2016 |
| Priority date | — |
| Expiry date | Sep 2, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12032
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a conductive layer, a diffusion barrier layer formed over the conductive layer, including a refractory metal compound, and acquired after a surface treatment, and a metal silicide layer formed over the diffusion barrier layer. The adhesion between a diffusion barrier layer and a metal silicide layer may be improved by increasing the surface energy of the diffusion barrier layer through a surface treatment. Therefore, although the metal silicide layer is fused in a high-temperature process, it is possible to prevent a void from being caused at the interface between the diffusion barrier layer and the metal silicide layer. Moreover, it is possible to increase the adhesion between a conductive layer and the diffusion barrier layer by increasing the surface energy of the conductive layer through the surface treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.