Semiconductor structure including stacked structure and method for forming the same
US9293348B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2013 |
| Grant date | Mar 22, 2016 |
| Priority date | — |
| Expiry date | Dec 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/694
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate, a stacked structure, a dielectric layer, a conductive structure, a dielectric structure and a conductive plug. The stacked structure includes dielectric films and conductive films arranged alternately. The dielectric layer is between the conductive structure and a sidewall of the stacked structure. The dielectric structure is on the stacked structure and defining a through via. The conductive plug fills the through via and physically contacts one of the conductive films exposed by the through via and adjoined with the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.