Voltage contrast inspection of deep trench isolation
US9293382B2 · kind B2 · utility
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6References
5Claims
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Key dates
| Filing date | Oct 24, 2014 |
| Grant date | Mar 22, 2016 |
| Priority date | — |
| Expiry date | Oct 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method including forming a first test structure and a second test structure in electrical contact with an inner buried plate and an outer buried plate, respectively, where the first and second test structures each comprise a deep trench filled with a conductive material, and measuring the voltage of the inner buried plate and the outer buried plate immediately after the formation of a deep trench isolation structure, where the inner buried plate and the outer buried plate are positioned on opposite sides of the deep trench isolation structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.