Deep trench isolation with air-gap in backside illumination image sensor chips
US9293490B2 · kind B2 · utility
7Cited by
1References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 14, 2014 |
| Grant date | Mar 22, 2016 |
| Priority date | — |
| Expiry date | Apr 9, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
An integrated circuit structure includes a semiconductor substrate, an image sensor extending from a front surface of the semiconductor substrate into the semiconductor substrate, and an isolation structure extending from a back surface of the semiconductor substrate into the semiconductor substrate, wherein the isolation structure includes an air-gap therein. An air-gap sealing layer is on a backside of the semiconductor substrate. The air-gap sealing layer seals the air-gap, wherein the air-gap sealing layer includes a portion exposed to the air-gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.