Semiconductor device with a field ring edge termination structure and a separation trench arranged between different field rings

US9293524B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Elmar Falck · Hohenbrunn, DE
• Wolfgang Roesener · Ottobrunn, DE
• Hans Peter Felsl · Munich, DE
• Andre Rainer Stegner · Unterhaching, DE

Key dates

• Filing date: May 2, 2014
• Grant date: Mar 22, 2016
• Expiry date: May 2, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device has a semiconductor body with bottom and top sides and a lateral surface. An active semiconductor region is formed in the semiconductor body and an edge region surrounds the active semiconductor region. A first semiconductor zone of a first conduction type is formed in the edge region. An edge termination structure having at least N field limiting structures is formed in the edge region. Each of the field limiting structures has a field ring and a separation trench formed in the semiconductor body, where N is at least 1. Each of the field rings has a second conduction type, forms a pn-junction with the first semiconductor zone and surrounds the active semiconductor region. For each of the field limiting structures, the separation trench of that field limiting structure is arranged between the field ring of that field limiting structure and the active semiconductor region.