Film forming method and film forming apparatus
US9293543B2 · kind B2 · utility
2Cited by
1References
19Claims
0Family size
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Key dates
| Filing date | Oct 2, 2013 |
| Grant date | Mar 22, 2016 |
| Priority date | — |
| Expiry date | May 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed AlO film are repeated, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated. A heat treatment is performed on the AlON film having the laminated structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.