Multigate resonant channel transistor
US9294035B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2013 |
| Grant date | Mar 22, 2016 |
| Priority date | — |
| Expiry date | May 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/611
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An embodiment includes an oscillator comprising an amplifier formed on a substrate; a multiple gate resonant channel array, formed on the substrate, including: (a) transistors including fins, each of the fins having a channel between source and drain nodes, coupled to common source and drain contacts; and (b) common first and second tri-gates coupled to each of the fins and located between the source and drain contacts; wherein the fins mechanically resonate at a first frequency when one of the first and second tri-gates is periodically activated to produce periodic downward forces on the fins. Other embodiments include a non planar transistor with a channel between the source and drain nodes and a tri-gate on the fin; wherein the fin mechanically resonates when the first tri-gate is periodically activated to produce periodic downward forces on the fin. Other embodiments are described herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.