Radiation source apparatus, lithographic apparatus, method of generating and delivering radiation and method for manufacturing a device
US9298110B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2011 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Jan 9, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05G2/0094
- WIPO fieldMedical technology
- WIPO sectorInstruments
Abstract
A contaminant trap is used in an EUV radiation source apparatus. An EUV radiation beam is generated and focused through a low pressure gaseous atmosphere into a virtual source point. The EUV radiation creates a plasma in the low pressure hydrogen atmosphere through which it passes. A contaminant trap including electrodes is located in or around radiation beam as it approaches the virtual source point. A DC biasing source is connected to the electrodes to create an electric field oriented to deflect out of the beam path contaminant particles that have been negatively charged by the plasma. Additional RF electrodes and/or an ionizer enhance the plasma to increase the charging of the particles. The deflecting electrodes can be operated with RF bias for a short time, to ensure dissipation of the enhanced plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.