Method and apparatus for measuring wafer bias potential
US9299539B2 · kind B2 · utility
44Cited by
18References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2009 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Aug 3, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A device for use in a wafer processing chamber having a plasma forming volume and a hot edge ring. The hot edge ring has a first surface and a second surface. The first surface is in contact with the plasma forming volume. The second surface is not in contact with the plasma forming volume. The device includes a detector operable to contact the second surface of the hot edge ring. The detector can detect a parameter of the hot edge ring and can provide a detected signal based on the detected parameter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.