Method for preparing semiconductor substrate with insulating buried layer gettering process
US9299556B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 31, 2010 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Feb 3, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for preparing a semiconductor substrate with an buried insulating layer by a guttering process, includes the following steps: providing a device substrate and a supporting substrate; forming an insulating layer on a surface of the device substrate; performing a heating treatment on the device substrate, so as to form a denuded zone on the surface of the device substrate; bonding the device substrate having the insulating layer with the supporting substrate, such that the insulating layer is sandwiched between the device substrate and the supporting substrate; annealing and reinforcing a bonding interface, such that an adherence level of the bonding interface meets requirements in the following chamfering grinding, thinning and polishing processes; performing the chamfering grinding, thinning and polishing processes on the device substrate which is bonded.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.