Method of forming a semiconductor device including trench termination and trench structure therefor
US9299776B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2014 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Aug 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an embodiment, a method of forming a semiconductor may include forming a plurality of active trenches and forming a termination trench substantially surrounding an outer periphery of the plurality of active trenches. The method may also include forming at least one active trench of the plurality of active trenches having corners linking trench ends to sides of active trenches wherein each active trench of the plurality of active trenches has a first profile along the first length and a second profile at or near the trench ends; and forming a termination trench substantially surrounding an outer periphery of the plurality of active trenches and having a second profile wherein one of the first profile or the second profile includes a non-linear shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.