Method for fabricating a transistor device with a tuned dopant profile
US9299801B1 · kind B1 · utility
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410References
14Claims
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Key dates
| Filing date | Mar 14, 2013 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Aug 1, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor device with a tuned dopant profile is fabricated by implanting one or more dopant migrating mitigating material such as carbon. The process conditions for the carbon implant are selected to achieve a desired peak location and height of the dopant profile for each dopant implant, such as boron. Different transistor devices with similar boron implants may be fabricated with different peak locations and heights for their respective dopant profiles by tailoring the carbon implant energy to effect tuned dopant profiles for the boron.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.