Methods of forming fins for a FinFET device wherein the fins have a high germanium content
US9299809B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 17, 2012 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Feb 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
One illustrative method disclosed herein includes forming a silicon/germanium fin in a layer of insulating material, wherein the fin has a first germanium concentration, recessing an upper surface of the layer of insulating material so as to expose a portion of the fin, performing an oxidation process so as to oxidize at least a portion of the fin and form a region in the exposed portion of the fin that has a second germanium concentration that is greater than the first germanium concentration, removing the oxide materials from the fin that was formed during the oxidation process and forming a gate structure that is positioned around at least the region having the second germanium concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.