Semiconductor structure and manufacturing method thereof
US9299843B2 · kind B2 · utility
2Cited by
14References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 13, 2013 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Dec 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
Abstract
A semiconductor structure comprises a substrate, a plurality of fins, an oxide layer and a gate structure. The fins protrude from the substrate and are separated from each other by the oxide layer. The surface of the oxide layer is uniform and even plane. The gate structure is disposed on the fins. The fin height is distance between the top of the fins and the oxide layer, and at least two of the fins have different fin heights.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.