Ultrafast laser annealing with reduced pattern density effects in integrated circuit fabrication
US9302348B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2012 |
| Grant date | Apr 5, 2016 |
| Priority date | — |
| Expiry date | Jan 30, 2034 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K2103/56
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Systems and methods for performing ultrafast laser annealing in a manner that reduces pattern density effects in integrated circuit manufacturing are disclosed. The method includes scanning at least one first laser beam over the patterned surface of a substrate. The at least one first laser beam is configured to heat the patterned surface to a non-melt temperature Tnonmelt that is within about 400° C. of the melt temperature Tmelt. The method also includes scanning at least one second laser beam over the patterned surface and relative to the first laser beam. The at least one second laser beam is pulsed and is configured to heat the patterned surface from the non-melt temperature provided by the at least one first laser beam up to the melt temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.