Gas injection system for chemical vapor deposition using sequenced valves
US9303319B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2010 |
| Grant date | Apr 5, 2016 |
| Priority date | — |
| Expiry date | Dec 29, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45574
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A gas injection system for a chemical vapor deposition system includes a gas manifold comprising a plurality of valves where each of the plurality of valves has an input that is coupled to a process gas source and an output for providing process gas. Each of a plurality of gas injectors has an input that is coupled to the output of one of the plurality of valves and an output that is positioned in one of a plurality of zones in a chemical vapor deposition reactor. A controller having a plurality of outputs where each of the plurality of outputs is coupled to a control input of one of the plurality of valves. The controller instructs at least some of the plurality of valves to open at predetermined times to provide a desired gas flow to each of the plurality of zones in the chemical vapor deposition reactor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.