Adjusting current ratios in inductively coupled plasma processing systems
US9305750B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2010 |
| Grant date | Apr 5, 2016 |
| Priority date | — |
| Expiry date | Jan 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/4652
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing system for generating plasma to process at least a wafer. The plasma processing system may include a first coil for conducting a first current for sustaining at least a first portion of the plasma. The plasma processing system may also include a second coil for conducting a second current for sustaining at least a second portion of the plasma. The plasma processing system may also include a power source for powering the first current and the second current. The plasma processing system may also include a parallel circuit for adjusting one of the amperage of the first current and the amperage of the second current. The parallel circuit may be electrically coupled between the power source and at least one of the first coil and the second coil. The parallel circuit may include an inductor and a variable capacitor electrically connected in parallel to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.