Plasma processing method
US9305795B2 · kind B2 · utility
1Cited by
3References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2014 |
| Grant date | Apr 5, 2016 |
| Priority date | — |
| Expiry date | Sep 2, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma processing method can etch regions having different densities at the same etching rates. When etching with surface wave plasma, both of layers contain Si and N, a processing gas includes a hydro fluorocarbon gas, a rare gas, and an oxygen gas, and a high frequency bias potential is applied to a preset location at a side of a substrate. Further, a power per unit area of the substrate, which generates the high frequency bias potential, is set to be about 0 W/m2 or more to about 400 W/m2 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.