Integrated metal spacer and air gap interconnect
US9305831B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2015 |
| Grant date | Apr 5, 2016 |
| Priority date | — |
| Expiry date | Mar 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76889
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments described herein relate to methods for forming an air gap interconnect. A metal spacer layer is conformally deposited on a substrate having mandrel structures formed thereon. The metal spacer layer is etched to form spacer features and the mandrel structures are removed from the substrate. Various other dielectric deposition, patterning and etching steps may be performed to desirably pattern materials present on the substrate. Ultimately, a trench is formed between adjacent spacer features and a capping layer is deposited over the trench to form an air gap between the adjacent spacer features. For packaging purposes, an interconnect via may be configured to contact at least one of the spacer features adjacent the air gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.