Method of making a semiconductor device
US9305844B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2015 |
| Grant date | Apr 5, 2016 |
| Priority date | — |
| Expiry date | Feb 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some embodiments include a semiconductor device having a stack structure including a plurality of alternating tiers of dielectric material and poly-silicon formed on a substrate. Such a semiconductor device may further include at least one opening having a high aspect ratio and extending into the stack structure to a level adjacent the substrate, a first poly-silicon channel formed in a lower portion of the opening adjacent the substrate, a second poly-silicon channel formed in an upper portion of the opening, and WSiX material disposed between the first poly-silicon channel and the second poly-silicon channel in the opening. The WSiX material is adjacent to the substrate, and can be used as an etch-landing layer and a conductive contact to contact both the first poly-silicon channel and the second poly-silicon channel in the opening. Other embodiments include methods of making semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.