Field effect transistor devices with protective regions

US9306061B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventors

• Lin Cheng · Chapel Hill, US
• Anant Agarwal · San Jose, US
• Vipindas Pala · Morrisville, US
• John Williams Palmour · Raleigh, US

Key dates

• Filing date: Mar 13, 2013
• Grant date: Apr 5, 2016
• Expiry date: Aug 16, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/292

Abstract

A transistor device includes a first conductivity type drift layer, a second conductivity type first region in the drift layer, a body layer having the second conductivity type on the drift layer including the first region, a source layer on the body layer, and a body contact region that extends through the source layer and the body layer and into the first region. The transistor device further includes a trench through the source layer and the body layer and extending into the drift layer adjacent the first region. The trench has an inner sidewall facing away from the first region. A gate insulator is on the inner sidewall of the trench, and a gate contact is on the gate insulator.