Methods for programming ReRAM devices
US9312002B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2014 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Jul 20, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A programming technique for a set of resistance-switching memory cells such as ReRAM cell involves programming the low resistance cells to the high resistance state (in a reset process) early in a programming operation, before programming the high resistance cells to the low resistance state (in a set process), to minimize losses due to leakage currents. The reset process can be performed in one or more phases. In some cases, a current limit is imposed which limits the number of cells which can be reset at the same time. Initially, the cells which are to be reset and set are identified by comparing a logical value of their current resistance state to a logical value of write data. If there is a match, the cell is not programmed. If there is not a match, the cell is programmed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.