Patent · US Active

Method for processing an oxygen containing semiconductor body

US9312120B2 · kind B2 · utility

1Cited by

2References

25Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Hans-Joachim Schulze · Taufkirchen, DE
Helmut Oefner · Zorneding, DE

Key dates

Filing date	Aug 29, 2014
Grant date	Apr 12, 2016
Priority date	—
Expiry date	Aug 29, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L22/12
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for processing a semiconductor body is disclosed. In an embodiment, the method includes reducing an oxygen concentration in a silicon wafer in a first region adjoining a first surface of the silicon wafer by a first heat treatment, creating vacancies in a crystal lattice of the wafer at least in a second region adjoining the first region by implanting particles via the first surface into the wafer and forming oxygen precipitates in the second region by a second heat treatment.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.