Patent · US Active

Method of manufacturing semiconductor devices including generating and annealing radiation-induced crystal defects

US9312135B2 · kind B2 · utility

1Cited by

7References

16Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Johannes Georg Laven · Taufkirchen, DE
Hans-Joachim Schulze · Taufkirchen, DE
Moriz Jelinek · Villach, AT
Werner Schustereder · Villach, AT

Key dates

Filing date	Mar 19, 2014
Grant date	Apr 12, 2016
Priority date	—
Expiry date	Apr 25, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/66
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The generation of auxiliary crystal defects is induced in a semiconductor substrate. Then the semiconductor substrate is pre-annealed at a temperature above a dissociation temperature at which the auxiliary crystal defects transform into defect complexes, which may be electrically inactive. Then protons may be implanted into the semiconductor substrate to induce the generation of radiation-induced main crystal defects. The defect complexes may enhance the efficiency of the formation of particle-related dopants based on the radiation-induced main crystal defects.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.