Surface modified TSV structure and methods thereof
US9312175B2 · kind B2 · utility
5Cited by
0References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2012 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Dec 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Microelectronic elements and methods of their manufacture are disclosed. A microelectronic element may include a substrate including an opening extending through a semiconductor region of the substrate, a dielectric layer cover a wall of the opening within at least a first portion of the opening, a first metal disposed within the first portion of the opening, a second metal disposed within a second portion of the opening. The second metal may form at least part of a contact of the microelectronic element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.