Strained silicon structure
US9312258B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2013 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Jul 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
A strained silicon substrate structure includes a first transistor and a second transistor disposed on a substrate. The first transistor includes a first gate structure and two first source/drain regions disposed at two sides of the first gate structure. A first source/drain to gate distance is between each first source/drain region and the first gate structure. The second transistor includes a second gate structure and two source/drain doped regions disposed at two side of the second gate structure. A second source/drain to gate distance is between each second source/drain region and the second gate structure. The first source/drain to gate distance is smaller than the second source/drain to gate distance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.