Transistors with semiconductor interconnection layers and semiconductor channel layers of different semiconductor materials
US9312343B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 13, 2009 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Apr 26, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A transistor may include a semiconductor drift layer of a first semiconductor material and a semiconductor channel layer on the semiconductor drift layer. The semiconductor channel layer may include a second semiconductor material different than the first semiconductor material. A semiconductor interconnection layer may be electrically coupled between the semiconductor drift layer and the semiconductor channel layer, and the semiconductor interconnection layer may include a third semiconductor material different than the first and second semiconductor materials. In addition, a control electrode may be provided on the semiconductor channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.