Patent · US Active

Semiconductor device with a charge carrier compensation structure and method for the production of a semiconductor device

US9312346B2 · kind B2 · utility

1Cited by

2References

18Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Anton Mauder · Kolbermoor, DE
Franz Hirler · Isen, DE
Armin Willmeroth · Friedberg, DE
Michael Rueb · Faak am See, AT
Holger Kapels · Holzkirchen, DE

Key dates

Filing date	Apr 24, 2014
Grant date	Apr 12, 2016
Priority date	—
Expiry date	Apr 24, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/256
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device has a cell field with drift zones of a first type of conductivity and charge carrier compensation zones of a second type of conductivity complementary to the first type. An edge region which surrounds the cell field has a higher blocking strength than the cell field, the edge region having a near-surface area which is undoped to more weakly doped than the drift zones, and beneath the near-surface area at least one buried, vertically extending complementarily doped zone is positioned.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.