Semiconductor structure and fabrication method thereof
US9312359B2 · kind B2 · utility
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77References
6Claims
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Key dates
| Filing date | Aug 10, 2015 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Aug 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
Abstract
A semiconductor structure includes a gate structure disposed on a substrate and having an outer spacer, a recess disposed in the substrate and adjacent to the gate structure, a doped epitaxial material filling up the recess, a cap layer including an undoped epitaxial material and disposed on the doped epitaxial material, a lightly doped drain disposed below the cap layer and sandwiched between the doped epitaxial material and the cap layer, and a silicide disposed on the cap layer and covering the doped epitaxial material to cover the cap layer together with the outer spacer without directly contacting the lightly doped drain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.