Structure with a metal silicide transparent conductive electrode and a method of forming the structure
US9312426B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2011 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Dec 10, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Disclosed are embodiments of a structure with a metal silicide transparent conductive electrode, which is commercially viable, robust and safe to use and, thus, optimal for incorporation into devices, such as flat panel displays, touch panels, solar cells, light emitting diodes (LEDs), organic optoelectronic devices, etc. Specifically, the structure can comprise a substrate (e.g., a glass or plastic substrate) and a transparent conducting film on that substrate. The transparent conducting film can comprise a metal silicide nanowire network. For example, in one embodiment, the metal silicide nanowire network can comprise multiple metal silicide nanowires fused together in a disorderly arrangement so that they form a mesh. In another embodiment, the metal silicide nanowire network can comprise multiple metal silicide nanowires patterned so that they form a grid. Also disclosed herein are various different method embodiments for forming such a structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.