Electrode structure for a non-volatile memory device and method
US9312483B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 24, 2012 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Sep 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/826
Abstract
A method of forming a resistive switching device includes forming a wiring structure over a first dielectric and substrate, forming a junction layer over the wiring structure, forming a resistive switching layer over the junction layer, forming an active metal over the resistive switching layer, forming a tungsten layer over the active metal, forming a barrier layer over the tungsten, depositing a mask over the barrier layer, etching the barrier layer to form a hard mask, etching the junction layer, the resistive switching layer, the active metal layer, and the adhesion layer using the hard mask to form a stack of material, while the adhesion layer maintains adhesion between the barrier layer and the active metal and while side walls of the stack of material have reduced contaminants and have reduced gap regions between the barrier layer and the resistive switching layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.