Plasma processing apparatus and plasma processing method
US9313872B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2010 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Feb 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/46
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.