Integration of an unprocessed, direct-bandgap chip into a silicon photonic device

US9316785B2 · kind B2 · utility

Assignee

• Skorpios Technologies, Inc. · US

Inventors

• Stephen B. Krasulick · Albuquerque, US
• John Dallesasse · Geneva, US
• Amit Mizrahi · San Jose, US
• Timothy Creazzo · Albuquerque, US
• Elton Marchena · Albuquerque, US
• John Y. Spann · Albuquerque, US

Key dates

• Filing date: Oct 8, 2014
• Grant date: Apr 19, 2016
• Expiry date: Oct 8, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/005
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A composite device for splitting photonic functionality across two or more materials comprises a platform, a chip, and a bond securing the chip to the platform. The platform comprises a base layer and a device layer. The device layer comprises silicon and has an opening exposing a portion of the base layer. The chip, a III-V material, comprises an active region (e.g., gain medium for a laser). The chip is bonded to the portion of the base layer exposed by the opening such that the active region of the chip is aligned with the device layer of the platform. A coating hermitically seals the chip in the platform.