Method and apparatus for forming silicon film
US9318328B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 24, 2013 |
| Grant date | Apr 19, 2016 |
| Priority date | — |
| Expiry date | May 24, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76232
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a silicon film includes a first film forming process, an etching process, a doping process, and a second film forming process. In the first film forming process, a silicon film doped with impurities containing boron is formed so as to embed a groove provided on an object to be processed. In the etching process, the silicon film formed in the first film forming process is etched. In the doping process, the silicon film etched in the etching process is doped with impurities containing boron. In the second film forming process, a silicon film doped with impurities containing boron is formed so as to embed the silicon film that is doped in the doping process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.