Patent · US Active

Grid for plasma ion implant

US9318332B2 · kind B2 · utility

4Cited by
261References
22Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 19, 2013
Grant dateApr 19, 2016
Priority date
Expiry dateMar 9, 2034

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A grid for minimizing effects of ion divergence in plasma ion implant. The plasma grid is made of a flat plate having a plurality of holes, wherein the holes are arranged in a plurality of rows and a plurality of columns thereby forming beamlets of ions that diverge in one direction. A mask is used to form the implanted shapes on the wafer, wherein the holes in the mask are oriented orthogonally to the direction of beamlet divergence.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.