Semiconductor structures comprising at least one through-substrate via filled with conductive materials
US9318438B2 · kind B2 · utility
3Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2015 |
| Grant date | Apr 19, 2016 |
| Priority date | — |
| Expiry date | Apr 6, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for selectively removing material from a substrate without damage to copper filling a via and extending at least partially through the substrate. The method comprises oxidizing a semiconductor structure comprising a substrate and at least one copper feature and removing a portion of the substrate using an etchant comprising SF6 without forming copper sulfide on the at least one copper feature. Additional methods are also disclosed, as well as semiconductor structures produced from such methods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.