SiC—Si3N4 nanolaminates as a semiconductor for MSM snapback selector devices
US9318531B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2014 |
| Grant date | Apr 19, 2016 |
| Priority date | — |
| Expiry date | Oct 16, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The semiconductor layer of the selector element can include a silicon carbide/silicon nitride nanolaminate stack. The semiconductor layer of the selector element can include a silicon carbon nitride/silicon nitride nanolaminate stack. Conductive materials of the MSM may include tungsten, titanium nitride, carbon, or a combination thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.