Method for producing a semiconductor body

US9324615B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Korbinian Perzlmaier · Regensburg, DE
• Heribert Zull · Regensburg, DE
• Franz Eberhard · Kilchberg, CH
• Thomas Nicolas Emmanuel Veit · Leipzig, DE
• Mathias Kämpf · Burglengenfeld, DE
• Jens Dennemarck · Regensburg, DE

Key dates

• Filing date: Apr 4, 2012
• Grant date: Apr 26, 2016
• Expiry date: May 5, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/0201
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has, at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of: removing the transmissive layer within the separating region, applying an absorbent layer within the separating region, increasing the absorption coefficient of the transmissive layer within the separating region, and separating the chip regions along the separating regions by a laser.