Eliminating field oxide loss prior to FinFET source/drain epitaxial growth
US9324713B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2015 |
| Grant date | Apr 26, 2016 |
| Priority date | — |
| Expiry date | Mar 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method for forming FinFET source/drain regions with reduced field oxide loss and the resulting devices are disclosed. Embodiments include forming silicon fins separated by a field oxide on a silicon substrate; recessing the field oxide to reveal an upper portion of the silicon fins; forming a spacer layer conformally over the upper portion of the fins and over the field oxide; filling spaces between the fins with a material having high selectivity with the spacer layer; recessing the material; removing the spacer layer above an upper surface of the material; removing the material; recessing the upper portion of the fins; and epitaxially growing source/drain regions on the recessed fins.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.