Ytterbium sputtering target and method of producing said target
US9328411B2 · kind B2 · utility
0Cited by
3References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 5, 2009 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | Nov 15, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC22F1/16
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Provided is a method of producing an ytterbium sputtering target, wherein an ytterbium target material having Vickers hardness (Hv) of the material surface of 15 or more and 40 or less is prepared in advance, and a surface of the ytterbium target material having the foregoing surface hardness is subject to final finish processing by way of machining. With the ytterbium sputtering target, present invention aims to remarkably reduce the irregularities (gouges) on the target surface after the final finish processing of the target material, and to inhibit the generation of particles during sputtering.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.